Slide_2020_06_10a by Yoshiaki Hagiwara





http://www.aiplab.com/Pinned_Photodiode_must_have_a_heavy_doped_Channel_Stops.pdf





The first Image Lag free FT CCD image sensor

with the PNP junction type Pinned Photodiode was

reported at SSDM1978 by Yoshiaki Hagiwara at Sony.




The first Image Lag free ILT CCD image sensor

with the PNPN junction type Pinned Photodiode

and the VOD electrical shutter function was

reported in the Journal of Nikkei Microdevices,

October 1987 Issue by Masao Hamazaki at Sony.



NEC 1982 paper and Kodak 1984 paper had no P+ Channel Stops ???

NEC 1982 ILT CCD Image sensor did have the image lag.

Maybe SONY built the first time in the world,

the Image Lag free ILT CCD image sensor

with the PNPN junction type Pinned Photodiode

and the VOD electrical shutter function as reported

in the Journal of Nikkei Microdevices, October 1987 Issue

by Masao Hamazaki and his group at Sony ?????




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Pinned Photodiode must have the heavily doped channel stops nearby
and also completely buried signal charge collection and storage N region.
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In 1975, Sony proposed the Pinned surface PNP and PNPN junction type
dynamic phototransistor with the in pixel vertical overflow drain (VOD)
function for light detecting devices.

In 1978, Sony introduced one chip FT CCD image sensor with the Pinned
surface PNP junction type dynamic phototransistor which then became
the primary photodetector for CCD image sensors.

In 1984 Kodak called the Sony original Pinned surface PNP junction type
dynamic phototransistor simply as Pinnned Photodiode.

In 1987, Sony introduced a 2/3 inch, 380,000-pixel CCD image sensor
(ICX022) with the Pinned surface NPNP junction type dynamic Photo
Thryristor with VOD function which Sony then called simply as Hole
Accumulation Diode (HAD).

In the 1990s, the era of passport size video cameras demands compact
CCD image sensors with large numbers of pixels (1/2 inch or smaller
with 400,000 pixels or more).

In 1995, Kodak adopted Pinned Photodiode for CMOS image sensors.

Pinned Photodiodes, since invention by Sony in 1975, are still
the primary photodetector for CCD and CMOS image sensors now.

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